大功率分立器件
峰值功率20W-1000W； 工作頻率10MHz-6GHz；基于自主知識(shí)產(chǎn)權(quán)的28V，50V LDMOS和GaN工藝平臺(tái)開發(fā) 全國產(chǎn)供應(yīng)； 封裝材料自主開發(fā)設(shè)計(jì)，具有低成本、高可靠性。
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產(chǎn)品型號(hào)
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Min. Freq
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Max. Freq
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VDD
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Pavg(dBm)
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DE@Pavg
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Gain(dB)
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ACPR (dBc)
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Test Freq.(MHz)
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MP Status
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Package
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Process
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|---|---|---|---|---|---|---|---|---|---|---|---|
| HTH8G09P550S | 700 MHz | 960 MHz | 48 V | 49 | 53.40% | 20.4 | -28.8 | 758 | MP | ACC2110S-4L | LDMOS |
| HTH9G09P550S | 700 MHz | 960 MHz | 48 V | 49 | 54% | 20 | -25 | 945 | MP | ACS2110S-4L | LDMOS |
| HTH9G09P700S | 758 MHz | 803 MHz | 48 V | 50.5 | 56% | 19.5 | -25 | 780 | MP | ACS3210S-4L | LDMOS |
| HTN9G22P370S | 1805 MHz | NA | 28 V | 47.3 | 48% | 16 | -30 | 2140 | MP | ACS2110S-4L | LDMOS |
| HTN8G27S015P | 700 MHz | 2700 MHz | 28 V | 30 | 12% | 20.2 | -49.5 | 2600 | MP | PDFN5*5 | LDMOS |
| HTN8G36S015P | 3300 MHz | 3600 MHz | 28 V | 30 | 11.9% | 18.2 | -48.9 | 3450 | MP | PDFN5*5 | LDMOS |
| HTH1D27P550S | 2496 MHz | 2690 MHz | 48 V | 49 | 56.30% | 15.7 | -26.8 | 2496 | MP | ACS2110S-4L2L | GaN |
| HTH1D09P700S | 700MHz | 960MHz | 48V | 50.5 | 0.633 | 17.9 | -26.4 | 780 | ACS2110S-4L | GaN | |
| HTH1D36P450H | 3400MHz | 3600MHz | 48V | 47.4 | 0.487 | 14.5 | -27 | 3500 | ACC2110S-4L | GaN | |
| HTH1D38P060P | 3300MHz | 4000MHz | 48V | 39 | 0.517 | 14.1 | -28.9 | 3500 | DFN7x6.5 | GaN | |
| HTH1D38S010P | 2300MHz | 4000MHz | 48V | 27 | 0.178 | 19.3 | -41.3 | 3600 | DFN4x4 | GaN | |
| HTH9G09P551S | 300MHz | 960MHz | 50V | 49 | 0.498 | 19.6 | -51.4 | 628 | ACS2110S-4L | LDMOS | |
| HTN7G21S040P | 700MHz | 2100MHz | 28V | 36 | 0.176 | 22 | -46 | 940 | TO-270 | LDMOS | |
| HTN8G27P040P | 2496MHz | 2690MHz | 30V | 38 | 0.49 | 17.5 | -31 | 2600 | DFN7.5x5 | LDMOS | |
| HTN8G27S020PG | 700MHz | 2700MHz | 28V | 33 | 0.149 | 19.3 | -47 | 2120 | TO-270 | LDMOS |
